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| Compare | Image | Part No | Manufacturer | Description | Inventory | Pricing | Quantity | Series | Packaging | Part Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Mfr Part No.G3S06503AInternal Code1022-280-7086683 | Global Power Technology-GPT |
DIODE SIC 650V 11.5A TO220AC
| Get a Quote | - | - | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.5A | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 181pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C | ||
| G3S06503A | ||||||||||||||||||||||
| | Mfr Part No.G3S06504AInternal Code1022-280-7086684 | Global Power Technology-GPT |
DIODE SIC 650V 11.5A TO220AC
| Get a Quote | - | - | Cut Tape (CT) Tape & Box (TB) | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.5A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 181pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C | ||
| G3S06504A | ||||||||||||||||||||||
 | Mfr Part No.G3S06504CInternal Code1022-280-7086685 | Global Power Technology-GPT |
DIODE SIL CARB 650V 11.5A TO252
| Get a Quote | - | - | Bulk | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.5A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 181pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 175°C | ||
| G3S06504C 1022-280-7086685 Global Power Technology-GPT
RoHS :
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Inventory:
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