- All Products
- Discrete Semiconductor Products
- FETs, MOSFETs - FET, MOSFET Arrays
3
results
| Compare | Image | Part No | Manufacturer | Description | Inventory | Pricing | Quantity | Series | Packaging | Part Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Mfr Part No.TP44220HBInternal Code2398-289-12489124 | Tagore Technology |
GANFET 2N-CH 650V 30QFN
| Get a Quote | - | - | Tray | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 650V | 10A (Tc) | 236mOhm @ 500mA, 6V | 2.5V @ 5.5mA | 1.5nC @ 6V | 55pF @ 400V | - | -55°C ~ 150°C (TJ) | Surface Mount | 30-PowerWFQFN | 30-QFN (8x10) | ||
| TP44220HB | ||||||||||||||||||||||||
 | Mfr Part No.TP44440HBInternal Code2398-289-12489126 | Tagore Technology |
GANFET 2N-CH 650V 30QFN
| Get a Quote | - | - | Tray | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 650V | 6.5A (Tc) | 472mOhm @ 500mA, 6V | 2.5V @ 2.8mA | 0.75nC @ 6V | 28pF @ 400V | - | -55°C ~ 150°C (TJ) | Surface Mount | 30-PowerWFQFN | 30-QFN (8x10) | ||
| TP44440HB | ||||||||||||||||||||||||
 | Mfr Part No.TP44110HBInternal Code2398-289-12489118 | Tagore Technology |
GANFET 2N-CH 650V 30QFN
| Get a Quote | - | - | Tray | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 650V | 19A (Tc) | 118mOhm @ 500mA, 6V | 2.5V @ 11mA | 3nC @ 6V | 110pF @ 400V | - | -55°C ~ 150°C (TJ) | Surface Mount | 30-PowerWFQFN | 30-QFN (8x10) | ||
| TP44110HB |