- All Products
- Discrete Semiconductor Products
- Single FETs, MOSFETs
3
results
| Compare | Image | Part No | Manufacturer | Description | Inventory | Pricing | Quantity | Series | Packaging | Part Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | Mfr Part No.TP44100SGInternal Code2398-278-12489114 | Tagore Technology |
GAN FET HEMT 650V .118OHM 22QFN
| Get a Quote | - | - | Tape & Reel (TR) Cut Tape (CT) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 19A (Tc) | 0V, 6V | 118mOhm @ 500mA, 6V | 2.5V @ 11mA | 3 nC @ 6 V | ±20V | 110 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 22-QFN (5x7) | 22-PowerVFQFN | ||
| TP44100SG | ||||||||||||||||||||||||||
 | Mfr Part No.TP44200SGInternal Code2398-278-12489121 | Tagore Technology |
GAN FET HEMT 650V .236OHM 22QFN
| Get a Quote | - | - | Tape & Reel (TR) Cut Tape (CT) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 10A (Tc) | 0V, 6V | 236mOhm @ 500mA, 6V | 2.5V @ 5.5mA | 1.5 nC @ 6 V | ±20V | 55 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 22-QFN (5x7) | 22-PowerVFQFN | ||
| TP44200SG | ||||||||||||||||||||||||||
 | Mfr Part No.TP44400SGInternal Code2398-278-12489125 | Tagore Technology |
GAN FET HEMT 650V .36OHM 22QFN
| Get a Quote | - | - | Tape & Reel (TR) Cut Tape (CT) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 6.5A (Tc) | 0V, 6V | 360mOhm @ 500mA, 6V | 2.5V @ 2.8mA | 0.75 nC @ 6 V | ±20V | 28 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 22-QFN (5x7) | 22-PowerVFQFN | ||
| TP44400SG |